SJ 3242-1989Gallium arsenide epitaxy wafers (English PDF)
砷化镓外延片
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Issued by
Ministry of Industry and Information Technology of PRC
Level / Type
National · Mandatory
Issue date
March 20, 1989
Implementation date
March 25, 1989
Scope
SJ 3242-1989 is the English-translated version of 砷化镓外延片.
SJ 3242-1989 — This standard specifies the GaAs epitaxial wafers and liquid vapor phase epitaxial wafers grade nomenclature, technical requirements, test methods, inspection rules, marking, packaging, transport and storage.
This standard applies to the preparation of a field-effect transistor, varactor.
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Document preview — SJ 3242-1989
National Standard of the People's Republic of China
- Classification
- H 83;L90
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies the GaAs epitaxial wafers and liquid vapor phase epitaxial wafers grade nomenclature, technical requirements, test methods, inspection rules, marking, packaging, transport and storage. This standard applies to the preparation of a field-effect transistor, varactor. Geng China Hall devices and devices using gallium arsenide wafer.
Document data
Chinese classification (CCS): H83;L90.
Estimated length of the Chinese original: 11,128 words.
Standards quoted by this document
SJ 3244.1; SJ 3247; SJ 3244.4; SJ 3244.3; GB 6624; GB 2828
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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