SJ 3125-1988Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD2027 (English PDF)
电子器件详细规范 ３ＤＤ２０２７型硅ＮＰＮ低频放大管壳额定双极型晶体管
SJ 3125 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| SJ 3125-1988 | Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD2027 | Obsolete |
SJ 3125-1988 is obsolete. This page sells the obsolete edition, for projects and contracts that still cite it.
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Level / Type
National · Mandatory
Issue date
April 8, 1988
Implementation date
December 1, 1988
Scope
SJ 3125-1988 is the English-translated version of 电子器件详细规范 ３ＤＤ２０２７型硅ＮＰＮ低频放大管壳额定双极型晶体管.
SJ 3125-1988 is the Chinese industry standard "Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification, Type 3DD2027".
It was issued on April 8, 1988, and took effect on December 1, 1988. It is obsolete: it has been withdrawn (abolished on January 20, 2010).
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Document preview — SJ 3125-1988
Contents
- Document data
1 Document data
Sector: Electronics (industry standard).
Date of issue: 1988-04-08.
Date of implementation: 1988-12-01.
Status: obsolete, withdrawn on 2010-01-20.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
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SJ 3125-1988
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