SJ 20789-2000Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor (English PDF)
MOS场效应晶体管热敏参数
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Issued by
Ministry of Industry and Information Technology of PRC
Level / Type
National · Mandatory
Issue date
October 20, 2000
Implementation date
October 20, 2000
Scope
SJ 20789-2000 is the English-translated version of MOS场效应晶体管热敏参数.
SJ 20789-2000 — This standard specifies the MOS field-effect transistor thermal parameters to the rapid screening test methods. This standard applies to MOS field effect transistor (hereinafter referred to as resistors) thermal parameters of rapid screening.
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Document preview — SJ 20789-2000
National Standard of the People's Republic of China
- Classification
- L 44
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the MOS field-effect transistor thermal parameters to the rapid screening test methods. This standard applies to MOS field effect transistor (hereinafter referred to as resistors) thermal parameters of rapid screening.
Document data
Chinese classification (CCS): L44.
Estimated length of the Chinese original: 5,525 words.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 4 pages — is available in the English PDF.
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SJ 20789-2000
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