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JJG 48-2004Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity (English PDF)

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Issued by

The General Administration of Quality Supervision, Inspection and Quarantine issued, This regulation was approved by the General Administration of Quality Supervision, Inspection and Quarantine on September 21,.2004 and

Level / Type

National · Mandatory

Issue date

September 21, 2004

Implementation date

March 21, 2005

Scope

JJG 48-2004 (Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity) is available as an English-translated PDF.

JJG 48-2004 — This standard applies to the standard sample resistivity silicon initial verification, testing and use of follow-up inspection.

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Document preview — JJG 48-2004

National Standard of the People's Republic of China

ICS
17.220
Classification
A 56
Replacing
JJG 48-1990

Issued by: The General Administration of Quality Supervision, Inspection and Quarantine issued, This regulation was approved by the General Administration of Quality Supervision, Inspection and Quarantine on September 21,.2004 and

Contents

  • 1 Scope (1)
  • 2 Overview (1)
  • 3 Metrological performance requirements (1)
  • 3.1 Measurement range of resistivity of standard samples (1)
  • 3.2 Standard sample nominal value (1)
  • 3.3 Standard sample parameters and performance requirements (1)
  • 4 General technical requirements (2)
  • 5 Measuring instrument control (3)
  • 5.1 Verification conditions (3)
  • 5.2 Verification items and verification methods (5)
  • 5.3 Processing of verification results (7)
  • 5.4 Verification cycle (8)
  • Appendix A Silicon Single Crystal Resistivity Standard Sample Temperature Correction Factor Table (9)
  • Appendix B Cleaning Methods for Silicon Single Crystal Resistivity Standard Samples (10)
  • Appendix C Original record of silicon single crystal resistivity standard sample verification (11)
  • Appendix D Silicon Single Crystal Resistivity Standard Sample Verification Certificate and Verification Result Notice Page Format (12)
  • Appendix E Calculation and Processing of Calibration Results of Silicon Single Crystal Resistivity Standard Samples (13)
  • Appendix F Table of Various Correction Coefficients for Calculating Standard Samples of Silicon Single Crystal Resistivity (15)
  • Appendix G Correction Factor Table (Feg) at 6mm from the edge of the standard sample of silicon single crystals of different diameters (16)

1 Scope (1)

2 Overview (1)

3 Metrological performance requirements (1)

3.1 Measurement range of resistivity of standard samples (1)

3.2 Standard sample nominal value (1)

3.3 Standard sample parameters and performance requirements (1)

4 General technical requirements (2)

5 Measuring instrument control (3)

5.1 Verification conditions (3)

5.2 Verification items and verification methods (5)

5.3 Processing of verification results (7)

5.4 Verification cycle (8)

Appendix A Silicon Single Crystal Resistivity Standard Sample Temperature Correction Factor Table (9)

Appendix B Cleaning Methods for Silicon Single Crystal Resistivity Standard Samples (10)

Appendix C Original record of silicon single crystal resistivity standard sample verification (11)

Appendix D Silicon Single Crystal Resistivity Standard Sample Verification Certificate and Verification Result Notice Page Format (12)

Appendix E Calculation and Processing of Calibration Results of Silicon Single Crystal Resistivity Standard Samples (13)

Appendix F Table of Various Correction Coefficients for Calculating Standard Samples of Silicon Single Crystal Resistivity (15)

Appendix G Correction Factor Table (Feg) at 6mm from the edge of the standard sample of silicon single crystals of different diameters (16)

Silicon single crystal resistivity standard sample verification procedure

1 Scope

This procedure is applicable to the first verification, subsequent verification and inspection in the use of silicon single crystal resistivity standard samples.

2 Overview

The silicon single crystal resistivity standard sample (hereinafter referred to as the standard sample) is made of high-purity polycrystalline silicon, which is prepared by single crystal.

It is manufactured by various processes such as neutron enthalpy doping and has a physical standard of certain geometric dimensions. Known by uncertainty Standard device, the physical resistance of the physical standard and other indicators are calibrated, the standard sample is used as the standard, the phase the parameter is passed for magnitude measurement.

3 Metrological performance requirements

3.1 Measurement range of resistivity of standard samples the measurement range of the resistivity is 0.005 ohm·cm to 5000 ohm·cm.

3.2 Standard sample nominal value the nominal value of the standard sample should meet one of the following 19 specifications, see Table 1.

Table 1 The nominal value of the standard sample ohm·cm

Resistivity nominal value 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 25 75 180 250 500 1000.2000 5000

3.3 Standard sample parameters and performance requirements

3.3.1 Standard samples, in addition to the nominal and actual values of resistivity, shall also have the following parameters or data. Conductive Type, doping element, diameter value, thickness value and usage requirements.

3.3.2 For the standard samples of different levels, the requirements of each indicator are shown in Table 2.

Table 2 Indicators of standard samples

Sample level qualification index project National standard sample first-class standard sample secondary standard sample Diameter (40~75)±1%mm (40~75)±1%mm (25~100)±2%mm Thickness W<=1.0mm W<=1.0mm W<=1.0mm Nominal value deviation 0.01ohm·cm~500ohm·cm ±5% ±10% ±15% Center point resistivity repeatability (2sigma) 0.3% 0.4% 0.8% Radial resistivity unevenness <=3% <=4% <=8%

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 14 pages — is available in the English PDF.

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