GB/T 6219-1998Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz (English PDF)
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Issued by
State Quality and Technical Supervision
Level / Type
National · Recommended
Issue date
November 17, 1998
Implementation date
June 1, 1999
Scope
GB/T 6219-1998 (Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz) is available as an English-translated PDF.
GB/T 6219-1998 — Semiconductor devices Discrete devices. Part 8: Field-effect transistors. Section One. Blank detail specification for singe-gate field-effect transistors up to 5W and 1GHz
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Document preview — GB/T 6219-1998
National Standard of the People's Republic of China
- ICS
- 31.080.30
- Classification
- L 42
- Replacing
- GB/T 6219-1986
Issued by: State Quality and Technical Supervision
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the development of 1GHz, the basic principles of fine specification Ocean single-gate field-effect transistor 5 W or less, to develop all the detailed specifications within this range should be consistent with the blank detail specification.
Document data
International classification (ICS): 31.080.30.
Chinese classification (CCS): L42.
Estimated length of the Chinese original: 16,145 words.
Adopted international standard: IEC 60747-8-1-1987, IDT.
Supersedes the earlier edition GB/T 6219-1986.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 11 pages — is available in the English PDF.
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