GB/T 47239.8-2026Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility and stability of flexible resistive memory (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting.

This document is Part 8 of GB/T 47239 "Semiconductor Devices - Flexible and Stretchable Semiconductor Devices". GB/T 47239 has been issued.

The following parts were laid out.

---Part 8: Test methods for the ductility, flexibility and stability of flexible resistive memory;

---Part 9: Performance testing method for one-transistor-one-resistor (1T1R) resistor memory cell.

This document is equivalent to IEC 62951-8:2023 "Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Flexible resistors".

Methods for testing the ductility, flexibility and stability of storage devices.

The following minimal editorial changes have been made to this document.

---Add notes to Figure 1 to explain the contents of the figure;

---Formula (1) in section 4.3.1 has been corrected to conform to industry practice and be consistent with the calculation method of bending strain in Appendix A;

---The descriptions of W0 and Wm below formula (1) in section 4.3.1 have been deleted because the symbols W0 and Wm do not appear in formula (1);

---Added explanations for the symbols Rt, Rc, and t in formulas (2) and (3) in section 4.3.2;

---Added explanation of symbol R in Figure 3 of section 4.3.2;

---Added explanations of indexing symbols in Figure A.1 of Appendix A and explanations of symbols in the formulas below.

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).

Introduction

Flexible and stretchable semiconductor devices possess characteristics such as stretchability, bendability, deformability, light weight, and variable shape, and can be used in robotic skin, etc.

Applications include wearable devices, optoelectronic products, and energy storage products. This is driven by advancements in semiconductor device technology and the development of flexible, stretchable semiconductor devices.

The widespread application of semiconductors has placed higher demands on product quality and reliability. GB/T 47239 "Flexible and Stretchable Semiconductor Devices" the "Semiconductor Devices" standard is a fundamental standard for testing and experimenting with flexible and stretchable semiconductor devices, and is essential for evaluating the performance of these devices.

It plays an important role in energy, stability, and reliability. It is planned to consist of 9 parts.

---Part 1: Bending Test Methods for Conductive Thin Films on Flexible Substrates. The purpose is to specify the bending test methods for conductive thin films on flexible semiconductor substrates.

Curved test method.

---Part 2: Evaluation Methods for Electron Mobility, Subthreshold Swing, and Threshold Voltage of Flexible Devices. The aim is to define the evaluation methods for flexible devices under bending conditions.

Evaluation methods for electrical parameters such as mobility, subthreshold swing, and threshold voltage of flexible thin-film transistor devices.

---Part 3: Performance Evaluation of Thin Film Transistors on Flexible Substrates in a Raised State. The aim is to define the evaluation criteria for flexible substrates in a raised state.

Methods for understanding the characteristics of thin-film transistors under certain conditions.

---Part 4: Fatigue Evaluation of Flexible Conductive Thin Films on Flexible Semiconductor Device Substrates. The aim is to specify the requirements for flexible semiconductor device substrates.

A fatigue evaluation method for flexible conductive films on a board.

---Part 5: Test methods for thermal properties of flexible materials. The purpose is to specify the test methods for the thermal properties of flexible materials.

---Part 6: Methods for testing the sheet resistance of flexible conductive films. The purpose is to specify the methods for testing the sheet resistance of flexible conductive films.

method.

---Part 7: Test Methods for Barrier Properties of Flexible Organic Semiconductor Packaging Films. The purpose is to specify the barrier properties of flexible organic semiconductor packaging films.

Test methods for membrane barrier properties.

---Part 8: Test methods for the ductility, flexibility, and stability of flexible resistive memory. The purpose is to specify the requirements for flexible resistive memory.

Terminology and definitions, as well as testing equipment and procedures for ductility, flexibility and stability.

---Part 9: Performance Test Methods for One-Transistor-One-Resistor (1T1R) Resistive Storage Cells. The purpose is to specify the performance test methods for one-transistor-one-resistor storage cells.

Terminology and definitions for resistive (1T1R) memory cells, and test apparatus and test stimuli for the performance parameters of resistive memory cells.

and testing process.

GB/T 47239 (all parts) are all one-to-one correspondences with IEC 62951 (all parts), through the standardization of flexible and stretchable semiconductors.

Testing and experimental methods for components support the development of the flexible semiconductor device industry.

Flexible and stretchable semiconductor devices Part 8: Flexibility of Flexible Resistive Memory Flexibility and stability testing methods

1 Scope

This document describes the terminology and test methods used to evaluate the ductility, flexibility, and stability of flexible resistive memory, including test procedures.

And the equipment used. This document also includes general requirements for test conditions such as ambient temperature and relative humidity. The test methods described in this document...

The focus should be on evaluating stability, not reliability.

2 Normative references

This document has no normative references.

3 Terms and Definitions

The following terms and definitions apply to this document.

Flexible devices that achieve storage functions by changing the resistance of dielectric materials.

bending radius

The minimum radius at which a material such as a pipe, tube, sheet, cable, or hose can be bent, as measured by its internal curvature.

A stable resistive state induced by applying a higher voltage (unipolar transition) or a forward bias (bipolar transition).

A stable resistive state induced by applying a lower voltage (unipolar transition) or a reverse bias (bipolar transition).

setvoltage

Vset

The voltage used to transition to a low-resistance state.

reset voltage

Vreset

The voltage used to switch to a high-impedance state.