GB/T 43493.3-2023Semiconductor device - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting:

This document is based on GB/T 43493 "Non-destructive testing and identification criteria for defects in silicon carbide homogeneous epitaxial wafers for power devices of semiconductor devices" Part 3: GB/T 43493 has published the following parts:

---Part 1: Defect classification;

---Part 2: Optical detection methods of defects;

---Part 3: Photoluminescence detection method of defects:

This document is equivalent to IEC 63068-3:2020 "Non-destructive testing of defects in silicon carbide homogeneous epitaxial wafers for power devices in semiconductor devices" Identification Criteria Part 3: Photoluminescence Detection Method for Defects:

Please note that some content in this document may be subject to patents: The publication structure of this document assumes no responsibility for identifying patents:

This document is jointly developed by the National Semiconductor Equipment and Materials Standardization Technical Committee (SAC/TC203) and the National Semiconductor Equipment and Materials Standards it was jointly proposed and coordinated by the Materials Sub-Technical Committee of the Chemistry Technical Committee (SAC/TC203/SC2):

Introduction

Silicon carbide (SiC), as a semiconductor material, is widely used in new generation power semiconductor devices: Compared with silicon (Si), it has breakdown SiC-based power semiconductors have superior physical properties such as high electric field strength, high thermal conductivity, high saturated electron drift rate and low intrinsic carrier concentration:

Compared with silicon-based devices, bulk devices have faster switching speed, low loss, high blocking voltage and high temperature resistance:

SiC power semiconductor devices have not yet been fully applied, mainly due to issues such as high cost, low yield, and long-term reliability: One of the the serious problem is defects in SiC epitaxial materials: Despite efforts to reduce defects in SiC epitaxial wafers, commercial SiC epitaxial wafers are still There are a certain number of flaws: Therefore, it is necessary to establish an international standard for the quality assessment of SiC homoepitaxial wafers:

GB/T 43493 aims to provide classification and optical detection methods for various defects in 4H-SiC homoepitaxial wafers for high-power semiconductor devices and photoluminescence detection methods: Consists of three parts:

---Part 1: Defect classification: The purpose is to list and provide various types of defects in 4H-SiC homoepitaxial wafers for high-power semiconductor devices:

traps and their typical characteristics:

---Part 2: Optical detection methods of defects: The purpose is to give and provide 4H-SiC homoepitaxial materials for high power semiconductor devices Definition and guidance method for optical inspection of defects in wafers:

---Part 3: Photoluminescence detection method of defects: The purpose is to give and provide 4H-SiC homogeneous materials for high power semiconductor devices Definition and guidance for photoluminescence detection of defects in epitaxial wafers:

Semiconductor device Defects of silicon carbide homoepitaxial wafers for power devices Non-destructive testing identification criteria Part 3: Photoluminescence detection method of defects

1 Scope

This document provides the definition and method for photoluminescence detection of growth defects in commercial silicon carbide (4H-SiC) homoepitaxial wafers: Mainly through Photoluminescence image examples and emission spectrum examples provide detection and classification methods for photoluminescence detection of defects on SiC homoepitaxial wafers:

in accordance with:

2 Normative reference documents

This document has no normative references:

3 Terms and definitions

The following terms and definitions apply to this document:

The address of the terminology database maintained by ISO and IEC for standardization is as follows:

---ISO online browsing platform:availableathttps://www:iso:org/obp 3.1 photoluminescence; PL the material absorbs photons and generates electron excitation, causing it to emit light:

Defect images are captured using light sources that excite electrons, focusing optics, filters, optical image sensors, and computer systems, Processing and analysis techniques:

focusingoptics A lens system used to magnify and capture optical images:

optical filter

Optical devices that block other wavelength bands and allow only a specific band of light to pass through:

optical image sensor A device that converts optical images into digital data:

imagecapturingimagecapturing the process of creating a two-dimensional raw digital image of a wafer defect: